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silicon carbide mosfet rs africa

MOSFETMatlab/Simulink-

Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package Download datasheet Overview Tools

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SiCMOSFET - STMicroelectronics

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SI4500BDY-T1-E3 | SI4500BDY-T1-E3 Dual N/P-Channel MOSFET

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